US Patent Issued to SAMSUNG ELECTRONICS on Oct. 28 for "Nanosheet transistor devices and related fabrication methods" (South Korean, American Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,647, issued on Oct. 28, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Nanosheet transistor devices and related fabrication methods" was invented by Ming He (San Jose, Calif.), JaeHyun Park (Hwaseong-si, South Korea), Chihak Ahn (Fremont, Calif.), Mehdi Saremi (Danville, Calif.), Rebecca Park (Mountain View, Calif.), Harsono Simka (Saratoga, Calif.) and Daewon Ha (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming transistor devices are provided. A method of forming a transistor device includes providing a nanosheet stack that includes a plurality of nanosheets on a substrate. A sacrificial layer...