US Patent Issued to SAMSUNG ELECTRONICS on Oct. 28 for "Methods of manufacturing magnetoresistive random access memory device" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,904, issued on Oct. 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Methods of manufacturing magnetoresistive random access memory device" was invented by Minkwan Kim (Seoul, South Korea), Daeeun Jeong (Yongin-si, South Korea) and Kyungtae Nam (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a magnetoresistive random-access memory (MRAM) device includes forming an insulating interlayer on a substrate, forming a contact plug extending through the insulating interlayer, forming a first blocking layer covering an upper surface of the contact plug, the first blocking layer includi...