ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,090, issued on Oct. 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Three-dimensional semiconductor memory device" was invented by Sanghoon Lee (Seongnam-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a lower structure, an upper pattern, a stacked structure, a separation structure passing through the stacked structure, a vertical structure comprising a channel layer, wherein the stacked structure comprises a plurality of interlayer insulating layers and a plurality of gate layers, the lower structure comprises a first lower pattern and a second lower pattern of a material...