US Patent Issued to SAMSUNG ELECTRONICS on Oct. 21 for "Source/drain region of a semiconductor device having an oxygen doped barrier layer formed between first and second epitaxial layers" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,117, issued on Oct. 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Source/drain region of a semiconductor device having an oxygen doped barrier layer formed between first and second epitaxial layers" was invented by Sangmoon Lee (Suwon-si, South Korea), Jinbum Kim (Seoul, South Korea) and Dongsuk Shin (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: an active region extending on a substrate in a first direction; a gate structure intersecting the active region and extending on the substrate in a second direction; and a source/drain region on the active region on at leas...