US Patent Issued to SAMSUNG ELECTRONICS on Oct. 21 for "Semiconductor memory device having connection pattern between the bit line contact and the separation insulating pattern" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,085, issued on Oct. 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor memory device having connection pattern between the bit line contact and the separation insulating pattern" was invented by Eunjung Kim (Suwon-si, South Korea) and Sohyun Park (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes active patterns spaced apart from each other in first and second directions intersecting each other, each active pattern having a central portion, a first end portion, and a second end portion, bit line contacts disposed on the central portions and spaced apart f...