ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,083, issued on Oct. 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-Si, South Korea).

"Semiconductor memory device and method of forming the same" was invented by Jonghyeok Kim (Suwon-si, South Korea), Jamin Koo (Suwon-si, South Korea), Beom Seo Kim (Suwon-si, South Korea) and Wonseok Yoo (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device including an active pattern defined by a device isolation pattern, a bit line extending in a first direction on the device isolation pattern and the active pattern, a bit line capping pattern including a first capping pattern, a second capping pattern, and a ...