ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,450,004, issued on Oct. 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor memory device and method for storing meta data in sub-array blocks of memory cell array" was invented by Kiheung Kim (Suwon-si, South Korea) and Taeyoung Oh (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a memory cell array and a column access circuit. The memory cell array includes a plurality of sub-array blocks and each of the sub-array blocks includes volatile memory cells. The column access circuit receives a plurality of data units, each of which includes normal data and meta...