ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,162, issued on Oct. 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor devices and methods of manufacturing the same" was invented by Naoto Umezawa (Seongnam-si, South Korea), Satoru Yamada (Yongin-si, South Korea), Junsoo Kim (Seongnam-si, South Korea), Honglae Park (Seongnam-si, South Korea) and Chunhyung Chung (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate; an isolation layer in a first trench, defining an active region of the substrate; a gate structure in a second trench ...