ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,433, issued on Oct. 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device with vertical patterns and data storage system including the same" was invented by Sujin Park (Gwangmyeong-si, South Korea), Heesung Kam (Anyang-si, South Korea), Byungjoo Go (Hwaseong-si, South Korea) and Hyunju Sung (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a stack structure including interlayer insulating layers and horizontal layers on a lower structure; a memory vertical structure vertically penetrating the stack structure; first and second barrier structures penetrating the...