US Patent Issued to SAMSUNG ELECTRONICS on Oct. 21 for "Semiconductor device with double etch stop layer and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,421, issued on Oct. 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device with double etch stop layer and method of manufacturing the same" was invented by Sunyoung Noh (Suwon-si, South Korea), Euibok Lee (Suwon-si, South Korea), Wandon Kim (Seongnam-si, South Korea), Minjoo Lee (Suwon-si, South Korea) and Hyunbae Lee (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate with an active region, a first interlayer insulating layer on the substrate, a first wiring in the first interlayer insulating layer that is electrically connected to the active region...