US Patent Issued to SAMSUNG ELECTRONICS on Oct. 21 for "Semiconductor device including fin field effect transistor with separation layer" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,172, issued on Oct. 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor device including fin field effect transistor with separation layer" was invented by Seonghwa Park (Seoul, South Korea), Hongbae Park (Seoul, South Korea), Jaehyun Lee (Hwaseong-si, South Korea), Jonghan Lee (Namyangju-si, South Korea), Dabok Jeong (Hwaseong-si, South Korea) and Minseok Jo (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first gate pattern and a second gate pattern on a substrate, the first gate pattern and the second gate pattern being spaced apart from each other, and a ...