ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,141, issued on Oct. 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the same" was invented by Sungkeun Lim (Suwon-si, South Korea), Unki Kim (Suwon-si, South Korea), Yuyeong Jo (Suwon-si, South Korea), Yihwan Kim (Suwon-si, South Korea), Jinbum Kim (Suwon-si, South Korea), Pankwi Park (Suwon-si, South Korea), Ilgyou Shin (Suwon-si, South Korea) and Seunghun Lee (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes; an active region; an isolation region defining the...