US Patent Issued to SAMSUNG ELECTRONICS on Oct. 21 for "Semiconductor device having a non-linear gate separation structure" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,171, issued on Oct. 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device having a non-linear gate separation structure" was invented by Myung-Dong Ko (Hwaseong-si, South Korea), Keon Yong Cheon (Yongin-si, South Korea), Dong Won Kim (Seongnam-si, South Korea), Hyun Suk Kim (Suwon-si, South Korea), Sang Hyeon Lee (Gwangju-si, South Korea) and Hyung Suk Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a substrate; first and second active patterns on the substrate, extending in a first direction and spaced apart in a second direction; gate electrodes on...