ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,128, issued on Oct. 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device and method for fabricating the same" was invented by Sung Il Park (Suwon-si, South Korea) and Jae Hyun Park (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device having high performance and a high degree of integration includes a substrate, a first transistor disposed on the substrate, the first transistor comprising a first active pattern including a first two-dimensional semiconductor material, a first gate electrode through which the first active pattern penetrates, and a first source/drain ...