ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,182, issued on Oct. 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Nonvolatile memory device" was invented by Youse Kim (Suwon-si, South Korea), Hyunggon Kim (Suwon-si, South Korea) and Bongsoon Lim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A nonvolatile memory device includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer includes word-lines, bit-lines and a memory cell array which includes one or more memory blocks spaced apart from each other, one or more dummy blocks between the one or more memory blocks and a through-hole via region. The second ...