US Patent Issued to SAMSUNG ELECTRONICS on Oct. 21 for "Non-volatile memory device with high voltage region and low voltage region" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,192, issued on Oct. 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Non-volatile memory device with high voltage region and low voltage region" was invented by Inho Kang (Suwon-si, South Korea), Daeseok Byeon (Suwon-si, South Korea), Beakhyung Cho (Suwon-si, South Korea), Min-Hwi Kim (Suwon-si, South Korea), Yongsung Cho (Suwon-si, South Korea) and Gyosoo Choo (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a non-volatile memory device including a page buffer circuit having a multi-stage structure, wherein a stage of the multi-stage structure includes a high voltage region, a first low vol...