ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,450, issued on Oct. 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (South Korea).
"Non-volatile memory device" was invented by Changhun Kim (Suwon-si, South Korea) and Jaeick Son (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory device includes a first chip including a first substrate and a circuit element, and a second chip stacked on the first chip. The second chip includes a second substrate including a first cell region and a second cell region, gate electrodes stacked on the second cell region of the second substrate, wherein the gate electrodes are between the second substrate and the first chip, an ...