ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,352, issued on Oct. 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Method for fabricating semiconductor device" was invented by Doo Gyu Lee (Suwon-si, South Korea), Jeong Jin Lee (Suwon-si, South Korea), Min-Cheol Kwak (Suwon-si, South Korea), Seung Yoon Lee (Suwon-si, South Korea) and Chan Hwang (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device using an overlay measurement and a semiconductor device fabricated by the method are provided. The method includes forming a lower pattern including a lower overlay key pattern having a first pitch, on a substrate...