ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,168, issued on Oct. 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Memory device and operating method thereof" was invented by Jihyun Park (Suwon-si, South Korea), Jungyu Lee (Suwon-si, South Korea), Yumin Kim (Suwon-si, South Korea), Chiweon Yoon (Suwon-si, South Korea) and Eunchan Lee (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides for memory apparatuses and systems including noise cancellation circuits, and operating methods thereof. In some embodiments, a memory device includes a first pad, a memory cell plane comprising a plurality of memory cells, a page buffer c...