ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,428, issued on Oct. 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Integrated circuit including high-speed device" was invented by Gyeongseok Song (Hwaseong-si, South Korea), Kyeongjoon Ko (Yongin-si, South Korea), Jaehyun Park (Seoul, South Korea), Junhan Bae (Hwaseong-si, South Korea), Jongjae Ryu (Changwon-si, South Korea) and Nakwon Lee (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit is provided. The integrated circuit includes: an active region extending in a first direction; gate electrodes extending in a second direction in parallel with each other; source/drain regions prov...