US Patent Issued to SAMSUNG ELECTRONICS on Oct. 21 for "Integrated circuit device including field-effect transistor with controlled sizes and configurations" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,148, issued on Oct. 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Integrated circuit device including field-effect transistor with controlled sizes and configurations" was invented by Sumin Yu (Suwon-si, South Korea), Jungtaek Kim (Suwon-si, South Korea), Moonseung Yang (Suwon-si, South Korea), Seojin Jeong (Suwon-si, South Korea), Edward Namkyu Cho (Suwon-si, South Korea), Seokhoon Kim (Suwon-si, South Korea) and Pankwi Park (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) device including fin-type active regions parallel to each other on a substrate, the fin-type active r...