ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,077, issued on Oct. 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Capacitor and memory device" was invented by Cheoljin Cho (Suwon-si, South Korea), Jaesoon Lim (Suwon-si, South Korea), Jaehyoung Choi (Hwaseong-si, South Korea) and Jungmin Park (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A capacitor and a DRAM device, the capacitor including a lower electrode; a dielectric layer structure on the lower electrode, the dielectric layer structure including a first zirconium oxide layer, a hafnium oxide layer, and a second zirconium oxide layer sequentially stacked; and an upper electrode on the diel...