ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,221, issued on Oct. 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Vertical non-volatile memory devices" was invented by Doohee Hwang (Uiwang-si, South Korea), Taehun Kim (Gwacheon-si, South Korea), Minkyung Bae (Hwaseong-si, South Korea) and Nayeong Yun (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical non-volatile memory device includes: a memory stack structure including gate lines and interlayer insulating layers and a channel hole extending in a stacking direction; a channel layer in the channel hole and extending in the stacking direction; and an information storage structure includ...