ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,233, issued on Oct. 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Variable resistance memory device" was invented by Song Yi Kim (Yongin-si, South Korea) and Junghyun Cho (Anyang-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A variable resistance memory device includes a memory cell structure on a substrate, the memory cell structure including conductive layers, each of the conductive layers including conductive lines spaced apart from each other in a direction parallel to a top surface of the substrate, and memory cell arrays alternatingly stacked with the conductive layers in a first direction perpendi...