US Patent Issued to SAMSUNG ELECTRONICS on Oct. 14 for "SRAM including reference voltage generator and read method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,461, issued on Oct. 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"SRAM including reference voltage generator and read method thereof" was invented by Kyuwon Choi (Suwon-si, South Korea), Chanho Lee (Suwon-si, South Korea) and Hyeongcheol Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A static random access memory includes a memory cell that stores data, a reference voltage generator that generates a reference voltage, a precharge circuit that is connected with the memory cell through a bit line, is connected with the reference voltage generator through a reference bit line, and pre-charges the ...