ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,220, issued on Oct. 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor memory device and method of fabricating the same" was invented by Chanmi Lee (Suwon-si, South Korea), Sangwuk Park (Hwaseong-si, South Korea), Yejeong Seo (Goyang-si, South Korea) and Sanggyo Chung (Anyang-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a stack structure including word lines and interlayer dielectric patterns that are alternately and repeatedly stacked on a semiconductor substrate. Semiconductor patterns are respectively disposed between vertically adjacent word lines. A b...