ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,205, issued on Oct. 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device including capacitor structure and method for manufacturing the same" was invented by Intak Jeon (Seoul, South Korea) and Younglim Park (Anyang-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device of the disclosure includes a substrate, a capacitor contact structure electrically connected to the substrate, a lower electrode connected to the capacitor contact structure, a capacitor insulating layer covering the lower electrode, and an upper electrode covering the capacitor insulating layer. The upper elec...