ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,277, issued on Oct. 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device and method of fabricating the same" was invented by Beomjin Park (Hwaseong-si, South Korea), Myung Gil Kang (Suwon-si, South Korea), Daewon Kim (Hwaseong-si, South Korea), Dongwon Kim (Seongnam-si, South Korea), Jaehoon Shin (Suwon-si, South Korea) and Keun Hwi Cho (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a substrate that includes first and second regions; a first active pattern on the first region and a second active pattern on the second region; a first gate electrode on the ...