US Patent Issued to SAMSUNG ELECTRONICS on Oct. 14 for "Memory cell array of a static random access memory and a static random access memory including the same" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,458, issued on Oct. 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory cell array of a static random access memory and a static random access memory including the same" was invented by Hyunjun Kim (Suwon-si, South Korea), Sekeon Kim (Seoul, South Korea), Seongook Jung (Seoul, South Korea), Kyeongrim Baek (Seoul, South Korea) and Keonhee Cho (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell array of an SRAM including: a top memory cell array including top memory cells; and a bottom memory cell array including bottom memory cells, the top memory cells include: a first top memory cell betwee...