ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,474, issued on Oct. 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Magnetic memory devices" was invented by Joonmyoung Lee (Gwacheon-si, South Korea), Junghwan Park (Seoul, South Korea), Jeong-Heon Park (Hwaseong-si, South Korea) and Kyungil Hong (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory device includes a first magnetic pattern and a second magnetic pattern that are sequentially stacked on a substrate, a tunnel barrier pattern between the first magnetic pattern and the second magnetic pattern, a lower electrode between the substrate and the first magnetic pattern, a blocking p...