ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,235, issued on Oct. 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Integrated circuit device with vertical cell array and through electrodes" was invented by Sangwan Nam (Busan, South Korea), Yongseok Kwon (Seoul, South Korea) and Hongsoo Jeon (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes; a peripheral circuit structure, a cell array structure including gate lines overlapping the peripheral circuit structure and disposed on the peripheral circuit structure in a vertical direction, a conductive plate interposed between the peripheral circuit structure and the ce...