US Patent Issued to SAMSUNG ELECTRONICS on Nov. 4 for "Three-dimensional semiconductor device having vertical misalignment" (New York Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,818, issued on Nov. 4, was assigned to SAMSUNG ELECTRONICS Co. LTD. (South Korea).

"Three-dimensional semiconductor device having vertical misalignment" was invented by Inchan Hwang (Schenectady, N.Y.), Seunghyun Song (Albany, N.Y.) and Byounghak Hong (Latham, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A multi-stack semiconductor device includes: a lower-stack transistor structure including a lower active region and a lower gate structure, the lower active region including a lower channel structure, and the lower gate structure surrounding the lower channel structure; an upper-stack transistor structure vertically stacked above the lower-sta...