US Patent Issued to SAMSUNG ELECTRONICS on Nov. 4 for "Semiconductor memory device with buried contacts and a fence" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,709, issued on Nov. 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-Si, South Korea).

"Semiconductor memory device with buried contacts and a fence" was invented by Hyeon Woo Jang (Suwon-si, South Korea), Soo Ho Shin (Hwaseong-si, South Korea), Dong Sik Park (Suwon-si, South Korea), Jong Min Lee (Hwaseong-si, South Korea) and Ji Hoon Chang (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor memory device with improved element performance and reliability. The semiconductor memory device includes a substrate, a gate electrode extending in a first direction in the substrate, a plu...