US Patent Issued to SAMSUNG ELECTRONICS on Nov. 4 for "Semiconductor devices having vertical channel transistor structures and methods of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,770, issued on Nov. 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor devices having vertical channel transistor structures and methods of fabricating the same" was invented by Minhee Cho (Suwon-si, South Korea), Kiseok Lee (Hwaseong-si, South Korea), Wonsok Lee (Suwon-si, South Korea), Mintae Ryu (Hwaseong-si, South Korea), Hyunmog Park (Seoul, South Korea), Woobin Song (Hwaseong-si, South Korea) and Sungwon Yoo (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a conductive line that extends in a first direction on a substrate; an insulating pattern layer o...