ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,698, issued on Nov. 4, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device and method of fabricating the same" was invented by Eunsuk Choi (Suwon-si, South Korea), Yeram Kim (Suwon-si, South Korea), Siwoo Kim (Suwon-si, South Korea), Jinah Kim (Suwon-si, South Korea), Hyongsoo Kim (Suwon-si, South Korea) and Seonbaek Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include an active pattern, a capacitor contact structure electrically connected to the active pattern, and a capacitor structure electrically connected to the capacitor contact structure. The capaci...