US Patent Issued to SAMSUNG ELECTRONICS on Nov. 4 for "Nitride semiconductor buffer structure and semiconductor device including the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,793, issued on Nov. 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Nitride semiconductor buffer structure and semiconductor device including the same" was invented by Boram Kim (Suwon-si, South Korea), Jongseob Kim (Suwon-si, South Korea), Woochul Jeon (Suwon-si, South Korea), Joonyong Kim (Suwon-si, South Korea), Junhyuk Park (Suwon-si, South Korea), Jaejoon Oh (Suwon-si, South Korea), Sunkyu Hwang (Suwon-si, South Korea) and Injun Hwang (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a nitride semiconductor buffer structure and a semiconductor device including the same. The buffer str...