US Patent Issued to SAMSUNG ELECTRONICS on Nov. 4 for "Multi-fin vertical field effect transistor and single-fin vertical field effect transistor on a single integrated circuit chip" (New York, Virginia Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,803, issued on Nov. 4, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Multi-fin vertical field effect transistor and single-fin vertical field effect transistor on a single integrated circuit chip" was invented by Jeonghyuk Yim (Halfmoon, N.Y.) and Kang Ill Seo (Springfield, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a vertical field-effect transistor (VFET) device which includes: a substrate; a plurality of single-fin VFETs including respective 1st fin structures on the substrate; and a plurality of multi-fin VFETs each of which includes a plurality of 2nd fin structures on the substrate, wherein a fin pit...