US Patent Issued to SAMSUNG ELECTRONICS on Nov. 4 for "Memory device included in memory system and method for detecting fail memory cell thereof" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,462,887, issued on Nov. 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Memory device included in memory system and method for detecting fail memory cell thereof" was invented by Jungmin Bak (Suwon-si, South Korea), Junyoung Ko (Suwon-si, South Korea) and Changhwi Park (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array including a plurality of memory cells, a word line defect detection circuit electrically connected to the memory cell array through a plurality of word lines, and control logic configured to control an input/output operation of the memory cell array. ...