ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,136, issued on Nov. 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Integrated circuit devices including backside power rail and methods of forming the same" was invented by Myunghoon Jung (Clifton Park, N.Y.), Wonhyuk Hong (Clifton Park, N.Y.), Inchan Hwang (Schenectady, N.Y.), Gunho Jo (Schenectady, N.Y.) and Kang-Ill Seo (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming an integrated circuit devices may include providing first and second active regions, an isolation layer, and first and second sacrificial stack structures. The first and second sacrificial stack structures may contact the first and seco...