ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,727, issued on Nov. 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Ferroelectric memory device" was invented by Gabjin Nam (Seoul, South Korea), Bongjin Kuh (Suwon-si, South Korea), Musarrat Hasan (Sejong-si, South Korea), Geonju Park (Suwon-si, South Korea) and Yongho Ha (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric memory device according to the inventive concept includes a substrate having source/drain regions, an interface layer on the substrate, a high dielectric layer on the interface layer, a ferroelectric layer on the high dielectric layer, and a gate electrode layer on the...