ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,233, issued on Nov. 25, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Variable resistance memory device" was invented by Sung-Ho Eun (Suwon-si, South Korea), Yu Na Gil (Suwon-si, South Korea) and Su Min Yu (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A variable resistance memory device includes a substrate, a cell array region including a plurality of memory cells on the substrate, a wiring region which includes an inter-wiring insulating film stacked on the cell array region, and an upper wiring structure in the inter-wiring insulating film and a protective film which covers an upper surface of the ...