US Patent Issued to SAMSUNG ELECTRONICS on Nov. 25 for "Semiconductor device having deuterium diffused into the substrate and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,661, issued on Nov. 25, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device having deuterium diffused into the substrate and method of manufacturing the same" was invented by Hwanyeol Park (Seoul, South Korea), Sejun Park (Seoul, South Korea), Junhyoung Cho (Seoul, South Korea), Sejin Kyung (Seoul, South Korea), Daewee Kong (Yongin-si, South Korea) and Taemin Kim (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes preparing a substrate including cell regions and a scribe lane region, forming circuit blocks in the cell regions of the...