US Patent Issued to SAMSUNG ELECTRONICS on Nov. 25 for "Manufacturing method of semiconductor device including forming a recess filling pattern" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,699, issued on Nov. 25, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Manufacturing method of semiconductor device including forming a recess filling pattern" was invented by Youngin Kim (Incheon, South Korea), Jonghyuk Park (Hwaseong-si, South Korea) and Byoungho Kwon (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a semiconductor device includes: etching a substrate, thereby forming a cell trench and a dummy trench; forming a preliminary isolation structure on the substrate, wherein a first dummy recess is formed in the preliminary isolation structure and overlaps with the...