ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,287, issued on Nov. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-Do, South Korea).
"Ferroelectric material, and electronic device including the same" was invented by Dukhyun Choe (Suwon-si, South Korea), Jinseong Heo (Suwon-si, South Korea) and Yunseong Lee (Osan-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a ferroelectric material and an electronic device including same, the ferroelectric material including: a first domain including a first polarization layer which is polarized in a first direction and a first spacer layer disposed adjacent to the first polarization layer; a second domain including a sec...