ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,822, issued on Nov. 18, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Three-dimensional semiconductor device and method of manufacturing the same" was invented by Kyen-Hee Lee (Suwon-si, South Korea) and Kyungsoo Kim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are three-dimensional semiconductor devices and their fabrication methods. The 3D semiconductor device includes a first active region on a substrate and including a lower channel pattern and a lower source/drain pattern connected to the lower channel pattern, a second active region above the first active region and including an upper...