US Patent Issued to SAMSUNG ELECTRONICS on Nov. 18 for "SRAM device and 3D semiconductor integrated circuit thereof" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,751, issued on Nov. 18, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"SRAM device and 3D semiconductor integrated circuit thereof" was invented by Ho Young Tang (Suwon-si, South Korea), Tae-Hyung Kim (Suwon-si, South Korea), Dae Young Moon (Suwon-si, South Korea), Sang-Yeop Baeck (Suwon-si, South Korea) and Dong-Wook Seo (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a three-dimensional (3D) semiconductor integrated circuit and a static random access memory (SRAM) device. The three-dimensional (3D) semiconductor integrated circuit includes: a first die including a power supply circuit a se...