ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,728, issued on Nov. 18, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor memory device and method of manufacture" was invented by Keunnam Kim (Suwon-si, South Korea), Kiseok Lee (Suwon-si, South Korea) and Byeongjoo Ku (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes; a substrate and an insulating layer on the substrate, first and second peripheral active regions on the insulating layer, each having a first surface and an opposing second surface, a device isolation layer between the first and second peripheral active regions to isolate the first and secon...