US Patent Issued to SAMSUNG ELECTRONICS on Nov. 18 for "Semiconductor device including a vertically stacked channel pattern and method for manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,796, issued on Nov. 18, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor device including a vertically stacked channel pattern and method for manufacturing the same" was invented by Namkyu Cho (Suwon-si, South Korea), Seokhoon Kim (Suwon-si, South Korea), Jeongho Yoo (Suwon-si, South Korea), Choeun Lee (Suwon-si, South Korea), Pankwi Park (Suwon-si, South Korea) and Dongsuk Shin (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate including a first active pattern, a first channel pattern on the first active pattern, the first channel pattern including...