ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,791, issued on Nov. 18, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device having hybrid channel structure" was invented by Kang-ill Seo (Albany, N.Y.), Sooyoung Park (Clifton Park, N.Y.) and Byounghak Hong (Albany, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a substrate; at least one hybrid channel structure formed on the substrate and including at least one 1st channel structure extended in 1st and 2nd directions in parallel with an upper surface of the substrate without directly contacting the substrate, and a 2nd channel structure connected to and intersecting the ...