ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,820, issued on Nov. 18, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-Do, South Korea).
"Semiconductor device and method of manufacturing the same" was invented by Dong Hyun Kim (Hwaseong-si, South Korea) and Sung Chul Park (Seongnam-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a substrate having a plurality of active fins, each of the plurality of active fins extending in a first direction, first and second gate structures crossing over the plurality of active fins, the first and second gate structures extending in a second direction different from the first direction, the first and second...